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UNISONIC TECHNOLOGIES CO., LTD 5N50
Preliminary Power MOSFET
500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 5N50 is an N-channel MOSFET adopting UTC's advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 5N50 can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
1
TO-220F
1
TO-262
1
FEATURES
* 5A, 500V, RDS(on) = 1.4 @VGS = 10 V * 100% avalanche tested * High switching speed
TO-252
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Package Lead Free Halogen Free 5N50L-TF3-T 5N50G-TF3-T TO-220F 5N50L-TN3-R 5N50G-TN3-R TO-252 5N50L-T2Q-T 5N50G-T2Q-T TO-262 Note: Pin Assignment: G: Gate D: Drain S: Source 1 G G G Pin Assignment 2 D D D 3 S S S Packing Tube Tape Reel Tube
www.unisonic.com.tw Copyright (c) 2011 Unisonic Technologies Co., Ltd
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS 30 V Continuous ID 5 A Drain Current Pulsed (Note 1) IDM 20 A Avalanche Current (Note 1) IAR 5 A Single Pulsed (Note 2) EAS 300 mJ Avalanche Energy Repetitive (Note 1) EAR 7.3 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220F 38 W Power Dissipation PD TO-252 54 W TO-262 125 W Junction Temperature TJ +150 C Storage Temperature TSTG -55~+150 C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER Junction to Ambient TO-220F TO-252 TO-262 TO-220F TO-252 TO-262 SYMBOL JA RATINGS 62.5 110 62.5 3.25 2.13 1 UNIT C/W C/W C/W C/W C/W C/W
Junction to Case
JC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
SYMBOL BVDSS TEST CONDITIONS ID=250A, VGS=0V MIN TYP MAX UNIT 500 0.5 1 10 100 -100 2.0 1.14 5.2 480 80 15 18 2.2 9.7 12 46 50 48 4.0 1.4 V V/C A nA nA V S pF pF pF nC nC nC ns ns ns ns A A V ns C
BVDSS/TJ Reference to 25C, ID=250A IDSS IGSS VDS=500V, VGS=0V VDS=400V, TC=125C VGS=30V, VDS=0V VGS=-30V, VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250A Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A Forward Transconductance (Note 4) gFS VDS=40V, ID=2.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 4,5) QG VGS=10V, VDS=400V, ID=5A Gate to Source Charge (Note 4,5) QGS Gate to Drain Charge (Note 4,5) QGD Turn-ON Delay Time (Note 4,5) tD(ON) Rise Time (Note 4,5) tR VDD=250V, ID=5A, RG=25 Turn-OFF Delay Time (Note 4,5) tD(OFF) Fall-Time (Note 4,5) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=5A, VGS=0V Reverse Recovery Time (Note 4) tRR IS=5A, VGS=0V, dIF/dt=100A/s Reverse Recovery Charge (Note 4) QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
625 105 20 24
35 100 110 105 5 20 1.4
263 1.9
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT RG
+ VDS L ISD
VGS
VDD Driver Same Type as DUT
dv/dt controlled by RG ISD controlled by pulse period
VGS (Driver)
D=
Gate Pulse Width Gate Pulse Period
10V
IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Gate Charge Test Circuit
Preliminary
Power MOSFET
Gate Charge Waveforms VGS QG
TEST CIRCUITS AND WAVEFORMS(Cont.)
Same Type as DUT 12V 200nF 50k VGS DUT 3mA 300nF VDS
10V QGS
QGD
Charge
Unclamped Inductive Switching Test Circuit VDS RG ID
Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD
10V tP DUT VDD VDD
VDS(t) Time
tP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
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UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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